Epitaxial growth of single-crystal Ca1-xSrxCuO 2 thin films by pulsed-laser deposition

D. P. Norton; B. C. Chakoumakos; J. D. Budai; D. H. Lowndes

doi:10.1063/1.109574

Epitaxial growth of single-crystal Ca_1-xSr_xCuO ₂ thin films by pulsed-laser deposition

D. P. Norton, B. C. Chakoumakos, J. D. Budai, D. H. Lowndes

Single Crystal Diffraction

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Abstract

Single-crystal thin films of Ca_1-xSr_xCuO₂, the]] infinite layer" parent compound for the high temperature superconductors, have been grown by pulsed-laser deposition over the composition range 0.15≤x≤1.0 utilizing a single-target codeposition growth scheme. Four-circle x-ray diffractometry reveals that these Ca_1-xSr _xCuO₂ thin films are very high-quality single crystals of the tetragonal, infinite layer phase with extremely narrow diffraction peaks, complete in-plane crystalline alignment with the (100) SrTiO₃ substrate, and virtually no impurity phases present. A systematic expansion of the c-axis lattice constant is observed as the Sr content is increased. Four-point transport measurements show that these single-crystal Ca _1-xSr_xCuO₂ films are semiconducting, with room temperature resistivities on the order of an ohm-cm. These results demonstrate that this metastable compound can be epitaxially stabilized over a wide range of composition.

Original language	English
Pages (from-to)	1679-1681
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	14
DOIs	https://doi.org/10.1063/1.109574
State	Published - 1993

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title = "Epitaxial growth of single-crystal Ca1-xSrxCuO 2 thin films by pulsed-laser deposition",

abstract = "Single-crystal thin films of Ca1-xSrxCuO2, the]] infinite layer{"} parent compound for the high temperature superconductors, have been grown by pulsed-laser deposition over the composition range 0.15≤x≤1.0 utilizing a single-target codeposition growth scheme. Four-circle x-ray diffractometry reveals that these Ca1-xSr xCuO2 thin films are very high-quality single crystals of the tetragonal, infinite layer phase with extremely narrow diffraction peaks, complete in-plane crystalline alignment with the (100) SrTiO3 substrate, and virtually no impurity phases present. A systematic expansion of the c-axis lattice constant is observed as the Sr content is increased. Four-point transport measurements show that these single-crystal Ca 1-xSrxCuO2 films are semiconducting, with room temperature resistivities on the order of an ohm-cm. These results demonstrate that this metastable compound can be epitaxially stabilized over a wide range of composition.",

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AU - Norton, D. P.

AU - Chakoumakos, B. C.

AU - Budai, J. D.

AU - Lowndes, D. H.

PY - 1993

Y1 - 1993

N2 - Single-crystal thin films of Ca1-xSrxCuO2, the]] infinite layer" parent compound for the high temperature superconductors, have been grown by pulsed-laser deposition over the composition range 0.15≤x≤1.0 utilizing a single-target codeposition growth scheme. Four-circle x-ray diffractometry reveals that these Ca1-xSr xCuO2 thin films are very high-quality single crystals of the tetragonal, infinite layer phase with extremely narrow diffraction peaks, complete in-plane crystalline alignment with the (100) SrTiO3 substrate, and virtually no impurity phases present. A systematic expansion of the c-axis lattice constant is observed as the Sr content is increased. Four-point transport measurements show that these single-crystal Ca 1-xSrxCuO2 films are semiconducting, with room temperature resistivities on the order of an ohm-cm. These results demonstrate that this metastable compound can be epitaxially stabilized over a wide range of composition.

AB - Single-crystal thin films of Ca1-xSrxCuO2, the]] infinite layer" parent compound for the high temperature superconductors, have been grown by pulsed-laser deposition over the composition range 0.15≤x≤1.0 utilizing a single-target codeposition growth scheme. Four-circle x-ray diffractometry reveals that these Ca1-xSr xCuO2 thin films are very high-quality single crystals of the tetragonal, infinite layer phase with extremely narrow diffraction peaks, complete in-plane crystalline alignment with the (100) SrTiO3 substrate, and virtually no impurity phases present. A systematic expansion of the c-axis lattice constant is observed as the Sr content is increased. Four-point transport measurements show that these single-crystal Ca 1-xSrxCuO2 films are semiconducting, with room temperature resistivities on the order of an ohm-cm. These results demonstrate that this metastable compound can be epitaxially stabilized over a wide range of composition.

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Epitaxial growth of single-crystal Ca_1-xSr_xCuO ₂ thin films by pulsed-laser deposition

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