Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

J. Lettieri; M. A. Zurbuchen; Y. Jia; D. G. Schlom; S. K. Streiffer; M. E. Hawley

doi:10.1063/1.126522

Epitaxial growth of non-c-oriented SrBi₂Nb₂O₉ on (111) SrTiO₃

J. Lettieri
, M. A. Zurbuchen
, Y. Jia
, D. G. Schlom
, S. K. Streiffer
, M. E. Hawley

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Epitaxial SrBi₂Nb₂O₉ thin films have been grown with a (103) orientation on (111) SrTiO₃ substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO₃ electrodes enabled the electrical properties of these (103)-oriented SrBi₂Nb₂O₉ films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm², and the dielectric loss was 2.5% for a 0.5-μm-thick film.

Original language	English
Pages (from-to)	2937-2939
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	20
DOIs	https://doi.org/10.1063/1.126522
State	Published - May 15 2000
Externally published	Yes

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10.1063/1.126522

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title = "Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3",

abstract = "Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5\% for a 0.5-μm-thick film.",

author = "J. Lettieri and Zurbuchen, \{M. A.\} and Y. Jia and Schlom, \{D. G.\} and Streiffer, \{S. K.\} and Hawley, \{M. E.\}",

year = "2000",

month = may,

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doi = "10.1063/1.126522",

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volume = "76",

pages = "2937--2939",

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TY - JOUR

T1 - Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

AU - Lettieri, J.

AU - Zurbuchen, M. A.

AU - Jia, Y.

AU - Schlom, D. G.

AU - Streiffer, S. K.

AU - Hawley, M. E.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film.

AB - Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film.

UR - https://www.scopus.com/pages/publications/0001410279

U2 - 10.1063/1.126522

DO - 10.1063/1.126522

M3 - Article

AN - SCOPUS:0001410279

SN - 0003-6951

VL - 76

SP - 2937

EP - 2939

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Epitaxial growth of non-c-oriented SrBi₂Nb₂O₉ on (111) SrTiO₃

Abstract

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