Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

J. Lettieri; M. A. Zurbuchen; Y. Jia; D. G. Schlom; S. K. Streiffer; M. E. Hawley

doi:10.1063/1.126522

Epitaxial growth of non-c-oriented SrBi₂Nb₂O₉ on (111) SrTiO₃

J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, M. E. Hawley

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Epitaxial SrBi₂Nb₂O₉ thin films have been grown with a (103) orientation on (111) SrTiO₃ substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO₃ electrodes enabled the electrical properties of these (103)-oriented SrBi₂Nb₂O₉ films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm², and the dielectric loss was 2.5% for a 0.5-μm-thick film.

Original language	English
Pages (from-to)	2937-2939
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	20
DOIs	https://doi.org/10.1063/1.126522
State	Published - May 15 2000
Externally published	Yes

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title = "Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3",

abstract = "Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film.",

author = "J. Lettieri and Zurbuchen, {M. A.} and Y. Jia and Schlom, {D. G.} and Streiffer, {S. K.} and Hawley, {M. E.}",

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T1 - Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

AU - Lettieri, J.

AU - Zurbuchen, M. A.

AU - Jia, Y.

AU - Schlom, D. G.

AU - Streiffer, S. K.

AU - Hawley, M. E.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film.

AB - Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Epitaxial growth of non-c-oriented SrBi₂Nb₂O₉ on (111) SrTiO₃

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