Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

Ho Nyung Lee; Stephan Senz; Alain Pignolet; Dietrich Hesse

doi:10.1016/S0955-2219(01)00065-6

Epitaxial growth of non-c-oriented ferroelectric SrBi₂Ta₂O₉ thin films on SrTiO₃ substrates

Ho Nyung Lee
, Stephan Senz
, Alain Pignolet
, Dietrich Hesse

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Non-c-axis-oriented SrBi₂Ta₂O₉ (SBT) epitaxial thin films with (116)-and (103)-orientations have been grown on Nb-doped (011)-and (111)-oriented SrTiO₃ (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT (001)∥STO(001): SBT[11̄0]∥STO[100] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2P_r) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 μC/cm², respectively, for a maximum applied electric field of 320 k V/cm. The dielectric constants of (116)-and (103)-oriented SBT were estimated as 155 and 189, respectively.

Original language	English
Pages (from-to)	1565-1568
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	21
Issue number	10-11
DOIs	https://doi.org/10.1016/S0955-2219(01)00065-6
State	Published - 2001
Externally published	Yes

Keywords

Dielectric properties
Ferroelectric properties
Films
Perovskites
X-ray methods

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10.1016/S0955-2219(01)00065-6

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@article{923f313ab50647d39d379cc6f2700a29,

title = "Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates",

abstract = "Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)-and (103)-orientations have been grown on Nb-doped (011)-and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT (001)∥STO(001): SBT[1{\=1}0]∥STO[100] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2Pr) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 μC/cm2, respectively, for a maximum applied electric field of 320 k V/cm. The dielectric constants of (116)-and (103)-oriented SBT were estimated as 155 and 189, respectively.",

keywords = "Dielectric properties, Ferroelectric properties, Films, Perovskites, X-ray methods",

author = "\{Nyung Lee\}, Ho and Stephan Senz and Alain Pignolet and Dietrich Hesse",

year = "2001",

doi = "10.1016/S0955-2219(01)00065-6",

language = "English",

volume = "21",

pages = "1565--1568",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

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}

TY - JOUR

T1 - Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

AU - Nyung Lee, Ho

AU - Senz, Stephan

AU - Pignolet, Alain

AU - Hesse, Dietrich

PY - 2001

Y1 - 2001

N2 - Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)-and (103)-orientations have been grown on Nb-doped (011)-and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT (001)∥STO(001): SBT[11̄0]∥STO[100] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2Pr) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 μC/cm2, respectively, for a maximum applied electric field of 320 k V/cm. The dielectric constants of (116)-and (103)-oriented SBT were estimated as 155 and 189, respectively.

AB - Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)-and (103)-orientations have been grown on Nb-doped (011)-and (111)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epitaxy orientation relationship SBT (001)∥STO(001): SBT[11̄0]∥STO[100] is valid for both cases of SBT thin films, irrespective of STO orientations. The measured remanent polarizations (2Pr) of (116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 μC/cm2, respectively, for a maximum applied electric field of 320 k V/cm. The dielectric constants of (116)-and (103)-oriented SBT were estimated as 155 and 189, respectively.

KW - Dielectric properties

KW - Ferroelectric properties

KW - Films

KW - Perovskites

KW - X-ray methods

UR - https://www.scopus.com/pages/publications/0034887613

U2 - 10.1016/S0955-2219(01)00065-6

DO - 10.1016/S0955-2219(01)00065-6

M3 - Article

AN - SCOPUS:0034887613

SN - 0955-2219

VL - 21

SP - 1565

EP - 1568

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 10-11

ER -

Epitaxial growth of non-c-oriented ferroelectric SrBi₂Ta₂O₉ thin films on SrTiO₃ substrates

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Keywords

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