Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

H. N. Lee; S. Senz; A. Visinoiu; A. Pignolet; D. Hesse; U. Gösele

Epitaxial growth of non-c-oriented ferroelectric SrBi₂Ta₂O₉ thin films on Si(100) substrates

H. N. Lee, S. Senz, A. Visinoiu, A. Pignolet, D. Hesse, U. Gösele

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Epitaxial SrBi₂Ta₂O₉ (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO₂ (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO₃. Studies on the in-plane crystallographic relations between SrRuO₃ and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)∥SrRuO₃(110)∥ YSZ(100)∥Si(100), SBT[110]∥SrRuO₃[001], and SrRuO₃ [111]∥YSZ[110]∥Si[110].

Original language	English
Pages (from-to)	101-104
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	71
Issue number	1
State	Published - Jul 2000
Externally published	Yes

Cite this

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title = "Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates",

abstract = "Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)∥SrRuO3(110)∥ YSZ(100)∥Si(100), SBT[110]∥SrRuO3[001], and SrRuO3 [111]∥YSZ[110]∥Si[110].",

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T1 - Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

AU - Lee, H. N.

AU - Senz, S.

AU - Visinoiu, A.

AU - Pignolet, A.

AU - Hesse, D.

AU - Gösele, U.

PY - 2000/7

Y1 - 2000/7

N2 - Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)∥SrRuO3(110)∥ YSZ(100)∥Si(100), SBT[110]∥SrRuO3[001], and SrRuO3 [111]∥YSZ[110]∥Si[110].

AB - Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)∥SrRuO3(110)∥ YSZ(100)∥Si(100), SBT[110]∥SrRuO3[001], and SrRuO3 [111]∥YSZ[110]∥Si[110].

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Epitaxial growth of non-c-oriented ferroelectric SrBi₂Ta₂O₉ thin films on Si(100) substrates

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