Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

Jonathan S. Morrell; Ziling B. Xue; Eliot D. Specht; Amit Goyal; Patrick M. Martin; Dominic F. Lee; R. Feenstra; D. T. Verebelyi; D. K. Christen; Thomas G. Chirayil; Mariappan Paranthaman; Catherine E. Vallet; David B. Beach

doi:10.1557/JMR.2000.0092

Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

Jonathan S. Morrell, Ziling B. Xue, Eliot D. Specht, Amit Goyal, Patrick M. Martin, Dominic F. Lee, R. Feenstra, D. T. Verebelyi, D. K. Christen, Thomas G. Chirayil, Mariappan Paranthaman, Catherine E. Vallet, David B. Beach

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Chemical solution epitaxy was used to deposit an epitaxial film of Gd₂O₃ on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H₂/96% Ar. Single-layer films were approximately 600 Å in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd₂O₃ (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Å. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm²) YBa₂Cu₃O_7-δ films were grown on roll-textured nickel substrates using Gd₂O₃ as the base layer in a three-layer buffer structure.

Original language	English
Pages (from-to)	621-628
Number of pages	8
Journal	Journal of Materials Research
Volume	15
Issue number	3
DOIs	https://doi.org/10.1557/JMR.2000.0092
State	Published - Mar 2000

Funding

This work was supported by the United States Department of Energy, Office of Science, Division of Materials Science, and the Office of Energy Efficiency and Renewable Energy and was performed at the Oak Ridge National Laboratory. The Oak Ridge National Laboratory is managed for the United States Department of Energy by the Lockheed Martin Energy Research Corporation under Contract No. DE-AC05-96OR22464.

Funders	Funder number
Division of Materials Science
United States Department of Energy
Lockheed Martin Corporation
Office of Science
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

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Morrell, J. S., Xue, Z. B., Specht, E. D., Goyal, A., Martin, P. M., Lee, D. F., Feenstra, R., Verebelyi, D. T., Christen, D. K., Chirayil, T. G., Paranthaman, M., Vallet, C. E., & Beach, D. B. (2000). Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique. Journal of Materials Research, 15(3), 621-628. https://doi.org/10.1557/JMR.2000.0092

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title = "Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique",

abstract = "Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H2/96% Ar. Single-layer films were approximately 600 {\AA} in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 {\AA}. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm2) YBa2Cu3O7-δ films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.",

author = "Morrell, {Jonathan S.} and Xue, {Ziling B.} and Specht, {Eliot D.} and Amit Goyal and Martin, {Patrick M.} and Lee, {Dominic F.} and R. Feenstra and Verebelyi, {D. T.} and Christen, {D. K.} and Chirayil, {Thomas G.} and Mariappan Paranthaman and Vallet, {Catherine E.} and Beach, {David B.}",

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AU - Verebelyi, D. T.

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AU - Beach, David B.

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N2 - Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H2/96% Ar. Single-layer films were approximately 600 Å in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Å. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm2) YBa2Cu3O7-δ films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.

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Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

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