Epitaxial growth of ferroelectric SrBi2Ta2O9thin films of mixed (100) and (116) orientation on SrLaGaO4(110)

Ho Nyung Lee; Dmitri N. Zakharov; Stephan Senz; Alain Pignolet; Dietrich Hesse

doi:10.1063/1.1415376

Epitaxial growth of ferroelectric SrBi₂Ta₂O₉thin films of mixed (100) and (116) orientation on SrLaGaO₄(110)

Ho Nyung Lee, Dmitri N. Zakharov, Stephan Senz, Alain Pignolet, Dietrich Hesse

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Abstract

Epitaxial ferroelectric SrBi₂Ta₂O₉(SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO₄(SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)∥SLG(110); SBT[001]∥SLG[001] and SBT(116)∥SLG(110); SBT[110]∥SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.

Original language	English
Pages (from-to)	2961-2963
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	18
DOIs	https://doi.org/10.1063/1.1415376
State	Published - Oct 29 2001
Externally published	Yes

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title = "Epitaxial growth of ferroelectric SrBi2Ta2O9thin films of mixed (100) and (116) orientation on SrLaGaO4(110)",

abstract = "Epitaxial ferroelectric SrBi2Ta2O9(SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4(SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)∥SLG(110); SBT[001]∥SLG[001] and SBT(116)∥SLG(110); SBT[110]∥SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.",

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T1 - Epitaxial growth of ferroelectric SrBi2Ta2O9thin films of mixed (100) and (116) orientation on SrLaGaO4(110)

AU - Lee, Ho Nyung

AU - Zakharov, Dmitri N.

AU - Senz, Stephan

AU - Pignolet, Alain

AU - Hesse, Dietrich

PY - 2001/10/29

Y1 - 2001/10/29

N2 - Epitaxial ferroelectric SrBi2Ta2O9(SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4(SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)∥SLG(110); SBT[001]∥SLG[001] and SBT(116)∥SLG(110); SBT[110]∥SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.

AB - Epitaxial ferroelectric SrBi2Ta2O9(SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4(SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)∥SLG(110); SBT[001]∥SLG[001] and SBT(116)∥SLG(110); SBT[110]∥SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.

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Epitaxial growth of ferroelectric SrBi₂Ta₂O₉thin films of mixed (100) and (116) orientation on SrLaGaO₄(110)

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