Epitaxial growth of Eu₃NbO₇ buffer layers on biaxially textured Ni-W substrates

Epitaxial film of Eu₃NbO₇ was deposited on biaxially textured nickel-3 at.% tungsten (Ni-W) substrates by using sol-gel processing . Precursor solution of 0.50 M concentration of total cation was spin coated on short samples of Ni-W substrates and films were crystallized at 1050°C in a gas mixture of Ar-4%H₂ for 15 minutes. High temperature in situ x-ray diffraction (HTXRD) studies show that the nucleation of Eu ₃NbO₇ films starts at 800°C. θ/2θ x-ray diffractograms revealed only (004) reflections, indicating a high degree of out-of-plane texture. Detailed X-Ray studies indicate that Eu ₃NbO₇ films has good out-of-plane and in-plane textures with full-widthhalf-maximum values of 6.8° and 8.21°, respectively. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Efforts are under way to grow YBCO films on sol-gel derived Eu₃NbO₇ buffer layers.