Abstract
Cu epitaxial films were grown on H-terminated Si(110) and Si(111) substrates by magnetron sputtering. The epitaxial orientation of the Cu films and microstructural characteristics were studied by X-ray diffraction, including the conventional θ-2θ mode and pole figures, and transmission electron microscopy (TEM). The results of pole figure analysis show an epitaxial orientation relationship of Cu(111)//Si(110) with Cu[1̄10]//Si[001] and Cu[11̄0]//Si[001] which are twin-related. The TEM observations of the cross-sectional samples reveal that the Cu film contains a layered structure due to growth twins. The reason for twin formation is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 13-16 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 315 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Mar 2 1998 |
Funding
This work was supported in part by the MRSEC Program of the National Science Foundation under Award Number DMR-9400399, and by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by Lockheed Martin Energy Research for the US Department of Energy under contract number DE-AC05-96OR22464.
Keywords
- Cu(111) films
- Epitaxial growth
- Magnetron sputtering