Epitaxial growth of Ba1-xKxBiO3 thin films by pulsed-laser deposition

D. P. Norton; J. D. Budai; B. C. Chakoumakos; R. Feenstra

doi:10.1063/1.108919

Epitaxial growth of Ba_1-xK_xBiO₃ thin films by pulsed-laser deposition

D. P. Norton
, J. D. Budai
, B. C. Chakoumakos
, R. Feenstra

Single Crystal Diffraction

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Epitaxial Ba_1-xK_xBiO₃ thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO₃ with T_c(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO₃ grown at 600°C significantly improves the properties of the Ba_1-xK_xBiO₃ films.

Original language	English
Pages (from-to)	414-416
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	4
DOIs	https://doi.org/10.1063/1.108919
State	Published - 1993

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title = "Epitaxial growth of Ba1-xKxBiO3 thin films by pulsed-laser deposition",

abstract = "Epitaxial Ba1-xKxBiO3 thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO3 with Tc(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO3 grown at 600°C significantly improves the properties of the Ba1-xKxBiO3 films.",

author = "Norton, \{D. P.\} and Budai, \{J. D.\} and Chakoumakos, \{B. C.\} and R. Feenstra",

year = "1993",

doi = "10.1063/1.108919",

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volume = "62",

pages = "414--416",

journal = "Applied Physics Letters",

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T1 - Epitaxial growth of Ba1-xKxBiO3 thin films by pulsed-laser deposition

AU - Norton, D. P.

AU - Budai, J. D.

AU - Chakoumakos, B. C.

AU - Feenstra, R.

PY - 1993

Y1 - 1993

N2 - Epitaxial Ba1-xKxBiO3 thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO3 with Tc(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO3 grown at 600°C significantly improves the properties of the Ba1-xKxBiO3 films.

AB - Epitaxial Ba1-xKxBiO3 thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO3 with Tc(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO3 grown at 600°C significantly improves the properties of the Ba1-xKxBiO3 films.

UR - https://www.scopus.com/pages/publications/0009957436

U2 - 10.1063/1.108919

DO - 10.1063/1.108919

M3 - Article

AN - SCOPUS:0009957436

SN - 0003-6951

VL - 62

SP - 414

EP - 416

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Epitaxial growth of Ba_1-xK_xBiO₃ thin films by pulsed-laser deposition

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