Epitaxial growth of Ba1-xKxBiO3 thin films by pulsed-laser deposition

D. P. Norton, J. D. Budai, B. C. Chakoumakos, R. Feenstra

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Epitaxial Ba1-xKxBiO3 thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO3 with Tc(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO3 grown at 600°C significantly improves the properties of the Ba1-xKxBiO3 films.

Original languageEnglish
Pages (from-to)414-416
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number4
DOIs
StatePublished - 1993

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