Abstract
Epitaxial Ba1-xKxBiO3 thin films have been grown by pulsed-laser deposition at temperatures as low as 400°C. Films have been grown on (100) MgO and SrTiO3 with Tc(R=0)=19.5 K and transition widths less than 1 K. Four circle x-ray diffraction shows that these epitaxial films are mostly (00l) oriented with good in-plane epitaxy. We find that, especially for growth on (100) MgO, an initial epitaxial layer of BaBiO3 grown at 600°C significantly improves the properties of the Ba1-xKxBiO3 films.
Original language | English |
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Pages (from-to) | 414-416 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 4 |
DOIs | |
State | Published - 1993 |