Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)

Ho Nyung Lee; Stephan Senz; Alain Pignolet; Dietrich Hesse

doi:10.1063/1.1370984

Epitaxial growth of (103)-oriented ferroelectric SrBi₂Ta₂O₉ thin films on Si(100)

Ho Nyung Lee, Stephan Senz, Alain Pignolet, Dietrich Hesse

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Non-c-axis-oriented ferroelectric SrBi₂Ta₂O₉ (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO₃ (SRO) bottom electrode. X-ray diffraction θ-2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)||SRO(111)||MgO(111)||YSZ(100)||Si(100); SBT[010]||SRO[011]||MgO[011]||YSZ〈001〉||Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (P_r) of 5.2 μC/cm² and a coercive field (E_l) of 76 kV/cm for a maximum applied electric field of 440 kV/cm.

Original language	English
Pages (from-to)	2922-2924
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	19
DOIs	https://doi.org/10.1063/1.1370984
State	Published - May 7 2001
Externally published	Yes

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title = "Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)",

abstract = "Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ-2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)||SRO(111)||MgO(111)||YSZ(100)||Si(100); SBT[010]||SRO[011]||MgO[011]||YSZ〈001〉||Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (El) of 76 kV/cm for a maximum applied electric field of 440 kV/cm.",

author = "Lee, {Ho Nyung} and Stephan Senz and Alain Pignolet and Dietrich Hesse",

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T1 - Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100)

AU - Lee, Ho Nyung

AU - Senz, Stephan

AU - Pignolet, Alain

AU - Hesse, Dietrich

PY - 2001/5/7

Y1 - 2001/5/7

N2 - Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ-2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)||SRO(111)||MgO(111)||YSZ(100)||Si(100); SBT[010]||SRO[011]||MgO[011]||YSZ〈001〉||Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (El) of 76 kV/cm for a maximum applied electric field of 440 kV/cm.

AB - Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ-2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)||SRO(111)||MgO(111)||YSZ(100)||Si(100); SBT[010]||SRO[011]||MgO[011]||YSZ〈001〉||Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (El) of 76 kV/cm for a maximum applied electric field of 440 kV/cm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Epitaxial growth of (103)-oriented ferroelectric SrBi₂Ta₂O₉ thin films on Si(100)

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