Epitaxial growth and strain relaxation studies of BaTiO 3 and BaTiO 3 /SrTiO 3 superlattices grown by MBE on SrTiO 3 -buffered Si(001) substrate

Clement Merckling, Maxim Korytov, Umberto Celano, Min Hsiang Mark Hsu, Sabine M. Neumayer, Stephen Jesse, Stefan De Gendt

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Abstract

In this work, the epitaxy of SrTiO 3 and BaTiO 3 perovskites on the (001)-oriented silicon substrate by molecular beam epitaxy is investigated. The heterostructures are studied by means of various structural and electrical characterization techniques. In this study especially, the authors reveal experimentally by nanobeam electron diffraction analysis the critical thickness prior relaxation of BaTiO 3 grown on an SrTiO 3 /Si pseudosubstrate. They also propose to use a strain mediated superlattice composed of stacked [BaTiO 3 /SrTiO 3 ] bilayers to prevent misfit dislocation formation. Using this approach, they could demonstrate high quality and dislocation free BaTiO 3 ferroelectric layers integrated on silicon as confirmed by piezo-force microscopy techniques.

Original languageEnglish
Article number021510
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume37
Issue number2
DOIs
StatePublished - Mar 1 2019

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