Abstract
In this work, the epitaxy of SrTiO 3 and BaTiO 3 perovskites on the (001)-oriented silicon substrate by molecular beam epitaxy is investigated. The heterostructures are studied by means of various structural and electrical characterization techniques. In this study especially, the authors reveal experimentally by nanobeam electron diffraction analysis the critical thickness prior relaxation of BaTiO 3 grown on an SrTiO 3 /Si pseudosubstrate. They also propose to use a strain mediated superlattice composed of stacked [BaTiO 3 /SrTiO 3 ] bilayers to prevent misfit dislocation formation. Using this approach, they could demonstrate high quality and dislocation free BaTiO 3 ferroelectric layers integrated on silicon as confirmed by piezo-force microscopy techniques.
Original language | English |
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Article number | 021510 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 37 |
Issue number | 2 |
DOIs | |
State | Published - Mar 1 2019 |