Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Ying Wang; Xinyu Liu; Seul Ki Bac; Jiashu Wang; Jacek K. Furdyna; Badih A. Assaf; Maksym Zhukovskyi; Tatyana Orlova; Valeria Lauter; Neil R. Dilley; Leonid P. Rokhinson

doi:10.1063/5.0075827

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Ying Wang, Xinyu Liu, Seul Ki Bac, Jiashu Wang, Jacek K. Furdyna, Badih A. Assaf, Maksym Zhukovskyi, Tatyana Orlova, Valeria Lauter, Neil R. Dilley, Leonid P. Rokhinson

Reflectometry

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2 Scopus citations

Abstract

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic-ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

Original language	English
Article number	055302
Journal	Journal of Applied Physics
Volume	131
Issue number	5
DOIs	https://doi.org/10.1063/5.0075827
State	Published - Feb 7 2022

Funding

The authors acknowledge support from the NSF DMR [Nos. 1836758 (Y.W.), 2005092 (L.P.R.), and 1905277 (X.L., S.-K.B., J.K.F., J.W., and B.A.A.)]. M.Z. and T.O. acknowledge the use of facilities for High Resolution Electron Microscopy at the University of Notre Dame. V.L. acknowledges the use of resources at the Spallation Neutron Source, a DOE Office of Science User Facility operated by the Oak Ridge National Laboratory.

Funders	Funder number
NSF DMR	1905277, 1836758, 2005092
Office of Science
Oak Ridge National Laboratory

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title = "Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations",

abstract = "We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic-ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.",

author = "Ying Wang and Xinyu Liu and Bac, {Seul Ki} and Jiashu Wang and Furdyna, {Jacek K.} and Assaf, {Badih A.} and Maksym Zhukovskyi and Tatyana Orlova and Valeria Lauter and Dilley, {Neil R.} and Rokhinson, {Leonid P.}",

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T1 - Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

AU - Wang, Ying

AU - Liu, Xinyu

AU - Bac, Seul Ki

AU - Wang, Jiashu

AU - Furdyna, Jacek K.

AU - Assaf, Badih A.

AU - Zhukovskyi, Maksym

AU - Orlova, Tatyana

AU - Lauter, Valeria

AU - Dilley, Neil R.

AU - Rokhinson, Leonid P.

PY - 2022/2/7

Y1 - 2022/2/7

N2 - We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic-ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

AB - We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic-ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

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VL - 131

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

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