Epitaxial growth and luminescent properties of Mn2+-activated ZnGa2O4 films

Yong Eui Lee; David P. Norton; John D. Budai; Christopher M. Rouleau; Jae Won Park

doi:10.1023/a:1009946105898

Epitaxial growth and luminescent properties of Mn²⁺-activated ZnGa₂O₄ films

Yong Eui Lee, David P. Norton, John D. Budai, Christopher M. Rouleau, Jae Won Park

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The epitaxial growth and properties of Mn²⁺-doped ZnGa₂O₄ thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa₂O₄/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.

Original language	English
Pages (from-to)	293-297
Number of pages	5
Journal	Journal of Electroceramics
Volume	4
Issue number	2
DOIs	https://doi.org/10.1023/a:1009946105898
State	Published - 2000
Event	5th International Workshop on Oxide Electronics - Maryland, MD, USA Duration: Dec 7 1998 → Dec 8 1998

Funding

This research was sponsored by the Oak Ridge National Laboratory, managed by Lockheed Martin Energy Research Corp., for the U.S. Department of Energy, under contract DE-AC05-96OR22464.

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title = "Epitaxial growth and luminescent properties of Mn2+-activated ZnGa2O4 films",

abstract = "The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.",

author = "Lee, {Yong Eui} and Norton, {David P.} and Budai, {John D.} and Rouleau, {Christopher M.} and Park, {Jae Won}",

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T1 - Epitaxial growth and luminescent properties of Mn2+-activated ZnGa2O4 films

AU - Lee, Yong Eui

AU - Norton, David P.

AU - Budai, John D.

AU - Rouleau, Christopher M.

AU - Park, Jae Won

PY - 2000

Y1 - 2000

N2 - The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.

AB - The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.

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JO - Journal of Electroceramics

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T2 - 5th International Workshop on Oxide Electronics

Y2 - 7 December 1998 through 8 December 1998

ER -

Epitaxial growth and luminescent properties of Mn²⁺-activated ZnGa₂O₄ films

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