Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate

Yang Liu; Shanyuan Niu; Thomas Orvis; Haimeng Zhang; Huan Zhao; Han Wang; Jayakanth Ravichandran

doi:10.1116/1.5045358

Epitaxial growth and electrical properties of VO₂ on [LaAlO₃]_0.3[Sr₂AlTaO₆]_0.7 (111) substrate

Yang Liu, Shanyuan Niu, Thomas Orvis, Haimeng Zhang, Huan Zhao, Han Wang, Jayakanth Ravichandran

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO₂) thin films synthesized on [LaAlO₃]_0.3[Sr₂AlTaO₆]_0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO₂ thin films and LSAT substrate is given as VO₂(020)||LSAT(111) and V O 2 [001] | | LSAT [11 2]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO₂ thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.

Original language	English
Article number	061506
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	36
Issue number	6
DOIs	https://doi.org/10.1116/1.5045358
State	Published - Nov 1 2018
Externally published	Yes

Funding

The authors gratefully acknowledge support from the Air Force Office of Scientific Research with Grant No. FA9550-16-1-0335. S.N. acknowledges the Link Foundation Energy Fellowship. The authors acknowledge the technical assistance of Shengyuan Bai and Boyang Zhao and the use of the

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title = "Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate",

abstract = "The authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO2) thin films synthesized on [LaAlO3]0.3[Sr2AlTaO6]0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and V O 2 [001] | | LSAT [11 2]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.",

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T1 - Epitaxial growth and electrical properties of VO2 on [LaAlO3]0.3[Sr2AlTaO6]0.7 (111) substrate

AU - Liu, Yang

AU - Niu, Shanyuan

AU - Orvis, Thomas

AU - Zhang, Haimeng

AU - Zhao, Huan

AU - Wang, Han

AU - Ravichandran, Jayakanth

PY - 2018/11/1

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AB - The authors report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition, of vanadium dioxide (VO2) thin films synthesized on [LaAlO3]0.3[Sr2AlTaO6]0.7 (LSAT) (111) (LSAT) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and V O 2 [001] | | LSAT [11 2]. The authors observed a sharp 4 orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. The authors also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.

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Epitaxial growth and electrical properties of VO₂ on [LaAlO₃]_0.3[Sr₂AlTaO₆]_0.7 (111) substrate

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