Abstract
The authors report the epitaxial growth and the dielectric properties of relaxor ferroelectric 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 thin films with atomically flat surface on GdScO 3 single crystal substrates. The authors studied the effects of growth conditions, such as the substrate temperature and the oxygen pressure on the structure of the thin films, as measured by x-ray diffraction, to identify the optimal growth conditions. The authors achieved sustained layer-by-layer growth of 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 films as monitored by in situ and real time reflective high energy electron diffraction. Atomic force microscopy investigations showed atomically smooth step terrace structures. Aberration-corrected scanning transmission electron microscopy images show good epitaxial relation of the film and the substrate without any line defects. High dielectric constant (∼1400) and slim hysteresis loops in polarization-electric field characteristics were observed in 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 films, which are characteristic of relaxor-type ferroelectric materials.
| Original language | English |
|---|---|
| Article number | 011502 |
| Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
| Volume | 37 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 2019 |
Funding
This work was supported by the Air Force Office of Scientific Research under Award No. FA9550-16-1-0335. The authors acknowledge the use of Center for Excellence in Nano Imaging for the characterization of the thin films. Z.W. and A.I.K. acknowledge support from the National Science Foundation (NSF; Grant No. 1718671). R.K. acknowledges support from the NSF (Award No. 1610604). A.S.T. and R.M. acknowledge support from the NSF (Grant No. DMR-1806147). A.Y.B. was supported by the Division of Materials Science and Engineering, U.S. DOE.