Enhancing power electronic devices with wide bandgap semiconductors

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Silicon carbide (SiC) unipolar devices have much higher breakdown voltages than silicon (Si) unipolar devices because of the ten times greater electric field strength of SiC compared with Si. 4H-SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H-SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and switching characteristics in this temperature range are presented. The characteristics of the SiC Schottky diodes are compared with those of a Si pn diode with comparable ratings.

Original languageEnglish
Pages (from-to)545-556
Number of pages12
JournalInternational Journal of High Speed Electronics and Systems
Volume16
Issue number2
DOIs
StatePublished - Jun 2006

Funding

The submitted manuscript has been authored by a contractor of the U.S. Government under Contract No. DE-AC05-00OR22725. Accordingly, the U.S. Government retains a non-exclusive, royalty-free license to publish from the contribution, or allow others to do so, for U.S. Government purposes. Prepared by the Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, managed by UT-Battelle for the U.S. Department of Energy under contract DE-AC05-00OR22725.

Keywords

  • JFET
  • MOSFET
  • Schottky diode
  • SiC

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