Abstract
The side-illumination-enhanced photovoltaic effect has been studied in La0.9Sr0.1MnO3/Si heterojunctions fabricated by laser molecular beam epitaxy. When a He-Ne laser illuminated the La 0.9Sr0.1MnO3 film surface, a stable photovoltage was produced and the responsivity is ∼0.17 mV mW-1. An enhancement of the photovoltaic effect occurred when the La 0.9Sr0.1 MnO3/Si interface was illuminated directly by side illumination, and the steady responsivity reached ∼6.87 mV mW-1. This work demonstrates an effective way to improve the photovoltaic responsivity of the perovskite oxide heterojunctions.
Original language | English |
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Article number | 016 |
Pages (from-to) | 5892-5895 |
Number of pages | 4 |
Journal | Journal of Physics D: Applied Physics |
Volume | 40 |
Issue number | 19 |
DOIs | |
State | Published - Oct 7 2007 |
Externally published | Yes |