Enhancement of memory window in the metal/ferroelectric (YMnO3)/insulator/semiconductor capacitor

Ho Nyung Lee; Yong Tae Kim; Chang Woo Lee; Sung Ho Choh

Enhancement of memory window in the metal/ferroelectric (YMnO₃)/insulator/semiconductor capacitor

Ho Nyung Lee
, Yong Tae Kim
, Chang Woo Lee
, Sung Ho Choh

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO₃/Si and Pt/YMnO₃/Y₂O₃/Si structures. The YMnO₃ thin film has c-axis oriented hexagonal structure after annealing at 900 °C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y₂O₃ films, we can reduce charge injection due to the electric field distribution between Y₂O₃ and SiO₂.

Original language	English
Pages	39-42
Number of pages	4
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: Aug 24 1998 → Aug 27 1998

Conference

Conference	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	08/24/98 → 08/27/98

Cite this

@conference{6a82569dfae3474490f9654a424e60f3,

title = "Enhancement of memory window in the metal/ferroelectric (YMnO3)/insulator/semiconductor capacitor",

abstract = "We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO3/Si and Pt/YMnO3/Y2O3/Si structures. The YMnO3 thin film has c-axis oriented hexagonal structure after annealing at 900 °C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y2O3 films, we can reduce charge injection due to the electric field distribution between Y2O3 and SiO2.",

author = "Lee, \{Ho Nyung\} and Kim, \{Yong Tae\} and Lee, \{Chang Woo\} and Choh, \{Sung Ho\}",

year = "1998",

language = "English",

pages = "39--42",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

}

Enhancement of memory window in the metal/ferroelectric (YMnO₃)/insulator/semiconductor capacitor. / Lee, Ho Nyung; Kim, Yong Tae; Lee, Chang Woo et al.
1998. 39-42 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Enhancement of memory window in the metal/ferroelectric (YMnO3)/insulator/semiconductor capacitor

AU - Lee, Ho Nyung

AU - Kim, Yong Tae

AU - Lee, Chang Woo

AU - Choh, Sung Ho

PY - 1998

Y1 - 1998

N2 - We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO3/Si and Pt/YMnO3/Y2O3/Si structures. The YMnO3 thin film has c-axis oriented hexagonal structure after annealing at 900 °C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y2O3 films, we can reduce charge injection due to the electric field distribution between Y2O3 and SiO2.

AB - We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO3/Si and Pt/YMnO3/Y2O3/Si structures. The YMnO3 thin film has c-axis oriented hexagonal structure after annealing at 900 °C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y2O3 films, we can reduce charge injection due to the electric field distribution between Y2O3 and SiO2.

UR - https://www.scopus.com/pages/publications/0032276023

M3 - Paper

AN - SCOPUS:0032276023

SP - 39

EP - 42

T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Enhancement of memory window in the metal/ferroelectric (YMnO₃)/insulator/semiconductor capacitor

Abstract

Conference

Other files and links

Fingerprint

Cite this