Enhanced thermoelectric properties of Cu2ZnSnSe4 with Ga-doping

Kaya Wei; Laura Beauchemin; Hsin Wang; Wallace D. Porter; Joshua Martin; George S. Nolas

doi:10.1016/j.jallcom.2015.08.046

Enhanced thermoelectric properties of Cu₂ZnSnSe₄ with Ga-doping

Kaya Wei, Laura Beauchemin, Hsin Wang, Wallace D. Porter, Joshua Martin, George S. Nolas

Nuclear Energy Materials Microanalysis

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Gallium doped Cu₂ZnSnSe₄ quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature transport properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S²/ρ) therefore increases with Ga-doping however the highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach for optimizing the thermoelectric properties of these materials and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for energy-related applications.

Original language	English
Pages (from-to)	844-847
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	650
DOIs	https://doi.org/10.1016/j.jallcom.2015.08.046
State	Published - Aug 22 2015

Funding

This work was supported, in part, by the National Science Foundation Grant No. DMR-1400957 . K.W. acknowledges support from the II-VI Foundation Block-Gift Program . H.W. and W.D.P would like to thank the support of the assistant secretary for Energy Efficiency and Renewable Energy of the Department of Energy and the Propulsion Materials program under the Vehicle Technologies program . Oak Ridge National Laboratory is managed by UT-Battelle LLC under contract DE-AC05000OR22725.

Keywords

Gallium doping
Quaternary chalcogenides
Thermoelectric properties

Access to Document

10.1016/j.jallcom.2015.08.046

Cite this

@article{a8a634f04eb24d66b86be71ff897c67b,

title = "Enhanced thermoelectric properties of Cu2ZnSnSe4 with Ga-doping",

abstract = "Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature transport properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping however the highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach for optimizing the thermoelectric properties of these materials and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for energy-related applications.",

keywords = "Gallium doping, Quaternary chalcogenides, Thermoelectric properties",

author = "Kaya Wei and Laura Beauchemin and Hsin Wang and Porter, {Wallace D.} and Joshua Martin and Nolas, {George S.}",

year = "2015",

month = aug,

day = "22",

doi = "10.1016/j.jallcom.2015.08.046",

language = "English",

volume = "650",

pages = "844--847",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced thermoelectric properties of Cu2ZnSnSe4 with Ga-doping

AU - Wei, Kaya

AU - Beauchemin, Laura

AU - Wang, Hsin

AU - Porter, Wallace D.

AU - Martin, Joshua

AU - Nolas, George S.

PY - 2015/8/22

Y1 - 2015/8/22

N2 - Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature transport properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping however the highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach for optimizing the thermoelectric properties of these materials and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for energy-related applications.

AB - Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature transport properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping however the highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach for optimizing the thermoelectric properties of these materials and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for energy-related applications.

KW - Gallium doping

KW - Quaternary chalcogenides

KW - Thermoelectric properties

UR - http://www.scopus.com/inward/record.url?scp=84939808308&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2015.08.046

DO - 10.1016/j.jallcom.2015.08.046

M3 - Article

AN - SCOPUS:84939808308

SN - 0925-8388

VL - 650

SP - 844

EP - 847

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -