Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching

Younghoon Kim; Changdeuck Bae; Hyun Suk Jung; Hyunjung Shin

doi:10.1063/1.5109525

Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching

Younghoon Kim, Changdeuck Bae, Hyun Suk Jung, Hyunjung Shin

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI₃) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI₃. Both the GAPbI₃- and MAPbI₃-based ReRAM devices showed bistable switching characteristics with a low operating voltage (<0.25 V) and high on/off ratio (∼10⁶). Remarkably, we found that the GAPbI₃-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI₃, only 4 days). The GAPbI₃ devices lasted for a larger number of cycles (>1900) in an endurance test and exhibited a longer data storage time (>3 × 10⁴ s) in a retention test. Our results suggest that GAPbI₃ has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.

Original language	English
Article number	081107
Journal	APL Materials
Volume	7
Issue number	8
DOIs	https://doi.org/10.1063/1.5109525
State	Published - Aug 1 2019

Funding

This work was supported by the Ministry of Science, ICT and Future Planning of Korea under contracts with Grant Nos. NRF-2016M3D1A1027664, NRF-2018K1A3A1A32055268, and NRF-2019R1A2C3009157.

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title = "Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching",

abstract = "We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (<0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (>1900) in an endurance test and exhibited a longer data storage time (>3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.",

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AU - Kim, Younghoon

AU - Bae, Changdeuck

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AU - Shin, Hyunjung

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AB - We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (<0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (>1900) in an endurance test and exhibited a longer data storage time (>3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.

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Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching

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