Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

Joyeeta Nag; E. Andrew Payzant; Karren L. More; Richard F. Haglund

doi:10.1063/1.3600333

Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

Joyeeta Nag, E. Andrew Payzant, Karren L. More, Richard F. Haglund

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Vanadium dioxide (VO₂) in bulk, thin-film, and nanostructured forms exhibits an insulator-to-metal transition accompanied by structural reorganization, induced by temperature, light, electric fields, doping, or strain. We have grown epitaxial films of VO₂ on c-cut (0001) sapphire following two different procedures: (1) room-temperature growth followed by annealing and (2) direct high-temperature growth. We find that variations in strain at the film-substrate interface in the two protocols leads to differences in morphologies and transition characteristics. Our results show that room-temperature-grown epitaxial films have smoother morphologies and better switching contrast, analogous to the enhanced performance of epitaxially grown compound semiconductors.

Original language	English
Article number	251916
Journal	Applied Physics Letters
Volume	98
Issue number	25
DOIs	https://doi.org/10.1063/1.3600333
State	Published - Jun 20 2011

Funding

Research at Vanderbilt University was supported by National Science Foundation (Grant No. ECS-0801985). Portions of this research were supported by the Oak Ridge National Laboratory's CNMS and SHaRE User Facilities, both sponsored by the Division of Scientific User Facilities, Office of Basic Energy Science, U.S. Department of Energy.

Funders	Funder number
Division of Scientific User Facilities
Office of Basic Energy Science
National Science Foundation
U.S. Department of Energy
Oak Ridge National Laboratory

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abstract = "Vanadium dioxide (VO2) in bulk, thin-film, and nanostructured forms exhibits an insulator-to-metal transition accompanied by structural reorganization, induced by temperature, light, electric fields, doping, or strain. We have grown epitaxial films of VO2 on c-cut (0001) sapphire following two different procedures: (1) room-temperature growth followed by annealing and (2) direct high-temperature growth. We find that variations in strain at the film-substrate interface in the two protocols leads to differences in morphologies and transition characteristics. Our results show that room-temperature-grown epitaxial films have smoother morphologies and better switching contrast, analogous to the enhanced performance of epitaxially grown compound semiconductors.",

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AB - Vanadium dioxide (VO2) in bulk, thin-film, and nanostructured forms exhibits an insulator-to-metal transition accompanied by structural reorganization, induced by temperature, light, electric fields, doping, or strain. We have grown epitaxial films of VO2 on c-cut (0001) sapphire following two different procedures: (1) room-temperature growth followed by annealing and (2) direct high-temperature growth. We find that variations in strain at the film-substrate interface in the two protocols leads to differences in morphologies and transition characteristics. Our results show that room-temperature-grown epitaxial films have smoother morphologies and better switching contrast, analogous to the enhanced performance of epitaxially grown compound semiconductors.

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Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

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