Enhanced flux pinning in MOCVD-YBCO films through Zr additions: Systematic feasibility studies

  • T. Aytug
  • , M. Paranthaman
  • , E. D. Specht
  • , Y. Zhang
  • , K. Kim
  • , Y. L. Zuev
  • , C. Cantoni
  • , A. Goyal
  • , D. K. Christen
  • , V. A. Maroni
  • , Y. Chen
  • , V. Selvamanickam

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Systematic effects of Zr additions on the structural and flux pinning properties of YBa2Cu3O7-δ (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions ≤7.5mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO3 nanodots.

Original languageEnglish
Article number014005
JournalSuperconductor Science and Technology
Volume23
Issue number1
DOIs
StatePublished - 2010

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