Enhanced flux pinning in MOCVD-YBCO films through Zr additions: Systematic feasibility studies

T. Aytug, M. Paranthaman, E. D. Specht, Y. Zhang, K. Kim, Y. L. Zuev, C. Cantoni, A. Goyal, D. K. Christen, V. A. Maroni, Y. Chen, V. Selvamanickam

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Abstract

Systematic effects of Zr additions on the structural and flux pinning properties of YBa2Cu3O7-δ (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions ≤7.5mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO3 nanodots.

Original languageEnglish
Article number014005
JournalSuperconductor Science and Technology
Volume23
Issue number1
DOIs
StatePublished - 2010

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