Enhanced carrier mobilities in two-dimensional electron gases at III-III/I-V oxide heterostructure interfaces

Density functional theory is used to explore the electronic reconstruction at III-III/I-V heterointerfaces. It is demonstrated that due to large B-cation valence differences, a δ-doped, two-dimensional electron gas (2DEG) can be created with an increased intrinsic carrier limit, resulting in interfacial charge densities twice that of prototypical LaTiO ₃/SrTiO ₃. Observed decreases in band effective masses suggest enhancements in carrier mobilities. Unprecedented agreement with recent experiments highlights the fact that it is the electronic structure of the bulk component material that defines the properties of oxide 2DEGs. These geometries provide a more tunable platform through which the underlying physics of electron confinement can be thoroughly examined and thus have implications for modern device applications.