Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

Navnidhi K. Upadhyay; Thomas Blum; Petro Maksymovych; Nickolay V. Lavrik; Noraica Davila; Jordan A. Katine; A. V. Ievlev; Miaofang Chi; Qiangfei Xia; J. Joshua Yang

doi:10.3389/fnano.2021.656026

Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

Navnidhi K. Upadhyay, Thomas Blum, Petro Maksymovych, Nickolay V. Lavrik, Noraica Davila, Jordan A. Katine, A. V. Ievlev, Miaofang Chi, Qiangfei Xia, J. Joshua Yang

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN_1+x/Ta₂O₅/TaN_1+x/Pd layers that could achieve a NL of 3 × 10⁵, which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta₂O₅/Ru based memristor on top of the proposed selector.

Original language	English
Article number	656026
Journal	Frontiers in Nanotechnology
Volume	3
DOIs	https://doi.org/10.3389/fnano.2021.656026
State	Published - Apr 15 2021

Funding

Part of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. This work was also partially supported by Air Force Office of Scientific Research (AFOSR) for the support through the MURI program under Contract No. FA9550-19-1-0213 and the U.S. Air Force Research Laboratory (AFRL) (Grant No. FA8750-18-2-0122). This work was also partially supported by the National Science Foundation under contract No. 2023752. Any opinions, findings and conclusions, or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of AFRL. Funding. Part of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. This work was also partially supported by Air Force Office of Scientific Research (AFOSR) for the support through the MURI program under Contract No. FA9550-19-1-0213 and the U.S. Air Force Research Laboratory (AFRL) (Grant No. FA8750-18-2-0122). This work was also partially supported by the National Science Foundation under contract No. 2023752. Any opinions, findings and conclusions, or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of AFRL.

Funders	Funder number
National Science Foundation	2023752
Air Force Office of Scientific Research
Office of Science
Air Force Research Laboratory	FA8750-18-2-0122
Multidisciplinary University Research Initiative	FA9550-19-1-0213

Keywords

crossbar arrays
high non-linearity
memristor
selectors
vertically integrated 1S1R

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10.3389/fnano.2021.656026

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title = "Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration",

abstract = "Memristor devices have been extensively studied as one of the most promising technologies for next-generation non-volatile memory. However, for the memristor devices to have a real technological impact, they must be densely packed in a large crossbar array (CBA) exceeding Gigabytes in size. Devising a selector device that is CMOS compatible, 3D stackable, and has a high non-linearity (NL) and great endurance is a crucial enabling ingredient to reach this goal. Tunneling based selectors are very promising in these aspects, but the mediocre NL value limits their applications in large passive crossbar arrays. In this work, we demonstrated a trilayer tunneling selector based on the Ge/Pt/TaN1+x/Ta2O5/TaN1+x/Pd layers that could achieve a NL of 3 × 105, which is the highest NL achieved using a tunnel selector so far. The record-high tunneling NL is partially attributed to the bottom electrode's ultra-smoothness (BE) induced by a Ge/Pt layer. We further demonstrated the feasibility of 1S1R (1-selector 1-resistor) integration by vertically integrating a Pd/Ta2O5/Ru based memristor on top of the proposed selector.",

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author = "Upadhyay, {Navnidhi K.} and Thomas Blum and Petro Maksymovych and Lavrik, {Nickolay V.} and Noraica Davila and Katine, {Jordan A.} and Ievlev, {A. V.} and Miaofang Chi and Qiangfei Xia and Yang, {J. Joshua}",

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Engineering Tunneling Selector to Achieve High Non-linearity for 1S1R Integration

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