Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices

Alireza Moazzeni; Md Tawsif Rahman Chowdhury; Christopher Rouleau; Gozde Tutuncuoglu

doi:10.1109/eIT57321.2023.10187322

Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices

Alireza Moazzeni, Md Tawsif Rahman Chowdhury, Christopher Rouleau, Gozde Tutuncuoglu

Functional Hybrid Nanomaterials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films.

Original language	English
Title of host publication	2023 IEEE International Conference on Electro Information Technology, eIT 2023
Publisher	IEEE Computer Society
Pages	505-508
Number of pages	4
ISBN (Electronic)	9781665493765
DOIs	https://doi.org/10.1109/eIT57321.2023.10187322
State	Published - 2023
Event	2023 IEEE International Conference on Electro Information Technology, eIT 2023 - Romeoville, United States Duration: May 18 2023 → May 20 2023

Publication series

Name	IEEE International Conference on Electro Information Technology
Volume	2023-May
ISSN (Print)	2154-0357
ISSN (Electronic)	2154-0373

Conference

Conference	2023 IEEE International Conference on Electro Information Technology, eIT 2023
Country/Territory	United States
City	Romeoville
Period	05/18/23 → 05/20/23

Funding

ACKNOWLEDGMENT We would like to acknowledge the funding from NSF Grant 2153177: 3D Printed Application-Specific Neuromor-phic Circuits: Design, Fabrication, and Implementation. Film synthesis by Pulsed Laser Deposition was conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. We also would like to acknowledge Keysight’s academic loan program for the availability of B1500. We would like to acknowledge the funding from NSF Grant 2153177: 3D Printed Application-Specific Neuromorphic Circuits: Design, Fabrication, and Implementation. Film synthesis by Pulsed Laser Deposition was conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory

Keywords

PLD
RRAM
annealing
resistive switching

Access to Document

10.1109/eIT57321.2023.10187322

Cite this

Moazzeni, A., Chowdhury, M. T. R., Rouleau, C., & Tutuncuoglu, G. (2023). Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices. In 2023 IEEE International Conference on Electro Information Technology, eIT 2023 (pp. 505-508). (IEEE International Conference on Electro Information Technology; Vol. 2023-May). IEEE Computer Society. https://doi.org/10.1109/eIT57321.2023.10187322

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title = "Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices",

abstract = "Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films.",

keywords = "PLD, RRAM, annealing, resistive switching",

author = "Alireza Moazzeni and Chowdhury, {Md Tawsif Rahman} and Christopher Rouleau and Gozde Tutuncuoglu",

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year = "2023",

doi = "10.1109/eIT57321.2023.10187322",

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Moazzeni, A, Chowdhury, MTR, Rouleau, C & Tutuncuoglu, G 2023, Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices. in 2023 IEEE International Conference on Electro Information Technology, eIT 2023. IEEE International Conference on Electro Information Technology, vol. 2023-May, IEEE Computer Society, pp. 505-508, 2023 IEEE International Conference on Electro Information Technology, eIT 2023, Romeoville, United States, 05/18/23. https://doi.org/10.1109/eIT57321.2023.10187322

Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices. / Moazzeni, Alireza; Chowdhury, Md Tawsif Rahman; Rouleau, Christopher et al.
2023 IEEE International Conference on Electro Information Technology, eIT 2023. IEEE Computer Society, 2023. p. 505-508 (IEEE International Conference on Electro Information Technology; Vol. 2023-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tutuncuoglu, Gozde

PY - 2023

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N2 - Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films.

AB - Resistive Switching Random Access Memory (RRAM) technology is critical for advancing beyond von Neumann computing applications like neuromorphic computing. Enhancing RRAM performances is contingent on carefully controlling the properties of the switching layer material, such as composition, stoichiometry, and crystal structure. This paper reports the use of a Pulsed Laser Deposition (PLD) and post-growth annealing process to create TaOx films with different crystal structures, and their comprehensive characterization, including structural analysis using XRD and XPS techniques, as well as electrical characterization through I-V measurements to assess switching performance. Bipolar resistive switching dynamics is demonstrated for RRAM device stacks fabricated from both as-grown and annealed TaOx films. Additionally, electroformation, set, and reset voltage device metrics of RRAM devices are reported to increase as a result of the annealing process, which enhances the crystallization of the PLD-grown TaOx films.

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Engineering the Device Performance of PLD Grown Tantalum Oxide based RRAM Devices

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