Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

Hieu Pham Trung Nguyen; Mehrdad Djavid; Steffi Y. Woo; Xianhe Liu; Ashfiqua T. Connie; Sharif Sadaf; Qi Wang; Gianluigi A. Botton; Ishiang Shih; Zetian Mi

doi:10.1038/srep07744

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

Hieu Pham Trung Nguyen, Mehrdad Djavid, Steffi Y. Woo, Xianhe Liu, Ashfiqua T. Connie, Sharif Sadaf, Qi Wang, Gianluigi A. Botton, Ishiang Shih, Zetian Mi

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ∼0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ∼95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.

Original language	English
Article number	7744
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep07744
State	Published - Jan 16 2015
Externally published	Yes

Funding

This work is being supported by the Natural Sciences and Engineering Research Council of Canada (NSERC). Part of the work was performed in the McGill University Micro Fabrication Facility. Electron microscopy imaging and analysis with the Titan 80–3003 was carried out at the Canadian Centre for Electron Microscopy, a National facility supported by NSERC and McMaster University. The authors wish to thank Prof. Mark Andrews in the Department of Chemistry and Dr. Songrui Zhao in the Department of Electrical and Computer Engineering at McGill University for helping with the time-resolved PL measurements and MBE growth, respectively.

Funders	Funder number
McMaster University
Natural Sciences and Engineering Research Council of Canada

Access to Document

10.1038/srep07744

Cite this

@article{7b5a37a56efd4397ba0bab715a2ea5cf,

title = "Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers",

abstract = "We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ∼0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ∼95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.",

author = "Nguyen, {Hieu Pham Trung} and Mehrdad Djavid and Woo, {Steffi Y.} and Xianhe Liu and Connie, {Ashfiqua T.} and Sharif Sadaf and Qi Wang and Botton, {Gianluigi A.} and Ishiang Shih and Zetian Mi",

year = "2015",

month = jan,

day = "16",

doi = "10.1038/srep07744",

language = "English",

volume = "5",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

}

TY - JOUR

T1 - Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

AU - Nguyen, Hieu Pham Trung

AU - Djavid, Mehrdad

AU - Woo, Steffi Y.

AU - Liu, Xianhe

AU - Connie, Ashfiqua T.

AU - Sadaf, Sharif

AU - Wang, Qi

AU - Botton, Gianluigi A.

AU - Shih, Ishiang

AU - Mi, Zetian

PY - 2015/1/16

Y1 - 2015/1/16

N2 - We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ∼0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ∼95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.

AB - We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ∼0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ∼95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.

UR - http://www.scopus.com/inward/record.url?scp=84927140855&partnerID=8YFLogxK

U2 - 10.1038/srep07744

DO - 10.1038/srep07744

M3 - Article

AN - SCOPUS:84927140855

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 7744

ER -

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this