Abstract
Filtered cathodic arc deposition of fully ionized boron (B) was used to fill ∼2 μm wide trenches in silicon, having a depth:width ratio of up to 3:1. Optimal, void-free, infill is achieved with proper balance between deposition and self-sputtering, as controlled by the substrate bias. Previously, this technique was used to fill similar trenches with copper [O. R. Monteiro, J. Vac. Sci. Technol. B 17, 1094 (1999)]. In this work, successful extension of this process to B was found to require up to ten times higher bias voltage (up to 1000 V) for the sputtering phase and to benefit from a stronger angular dependence of self-sputtering yield for this lighter element.
| Original language | English |
|---|---|
| Pages (from-to) | L14-L17 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 27 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2009 |
| Externally published | Yes |
Funding
This work was funded by the U.S. Department of Homeland Security, Domestic Nuclear Detection Office under Contract No. HSHQDC-07-C-00121 (Phase I SBIR). Valuable discussions with A. Anders of LBNL, R. C. Hazelton, J. J. Moschella, and E. J. Yadlowsky of HY-Tech Research and J. M. Williams of Brontek Delta Corporation are gratefully acknowledged. Expert FIB-SEM analysis was provided by John McIntosh of Virginia Tech’s Nanoscale Characterization and Fabrication Laboratory, which is operated under the Institute for Critical Technologies and Applied Science (ICTAS). Substrates and guidance on detector device needs were provided by Rebecca J. Nikolić of LLNL.
| Funders | Funder number |
|---|---|
| U.S. Department of Homeland Security | |
| Small Business Innovation Research | |
| Domestic Nuclear Detection Office | HSHQDC-07-C-00121 |