TY - GEN
T1 - Emerging transport behavior in manganites wires
AU - Ward, T. Z.
AU - Shen, Jian
PY - 2008
Y1 - 2008
N2 - The two hottest areas of research in condensed matter physics are complexity and nanoscale physics. Interestingly, these two areas have little overlap as most of the nanophysics research work is conducted using "simple" materials of metals or semiconductors instead of complex materials such as transition metal oxides. However, due to the strong electronic correlation, it is exactly the transition metal oxides that will most likely lead to observations of striking new phenomena under spatial confinement. We will use perovskite manganites as model systems to demonstrate how spatial confinement can dramatically affect their transport and magnetic properties. The emerging magnetic and transport behavior is likely associated with the electronic phase separation under confined geometry in the manganites. Some of the new properties such as ultrasharp jumps of magnetoresistance and reentrant metal-insulator transition may have significant impact on fabricating oxides-based novel devices.
AB - The two hottest areas of research in condensed matter physics are complexity and nanoscale physics. Interestingly, these two areas have little overlap as most of the nanophysics research work is conducted using "simple" materials of metals or semiconductors instead of complex materials such as transition metal oxides. However, due to the strong electronic correlation, it is exactly the transition metal oxides that will most likely lead to observations of striking new phenomena under spatial confinement. We will use perovskite manganites as model systems to demonstrate how spatial confinement can dramatically affect their transport and magnetic properties. The emerging magnetic and transport behavior is likely associated with the electronic phase separation under confined geometry in the manganites. Some of the new properties such as ultrasharp jumps of magnetoresistance and reentrant metal-insulator transition may have significant impact on fabricating oxides-based novel devices.
UR - http://www.scopus.com/inward/record.url?scp=60649105822&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2008.4734602
DO - 10.1109/ICSICT.2008.4734602
M3 - Conference contribution
AN - SCOPUS:60649105822
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 556
EP - 558
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -