Electronic structure orientation as a map of in-plane antiferroelectricity in β′-In2Se3

Joseph L. Spellberg; Lina Kodaimati; Prakriti P. Joshi; Nasim Mirzajani; Liangbo Liang; Sarah B. King

doi:10.1126/sciadv.ado2136

Electronic structure orientation as a map of in-plane antiferroelectricity in β′-In₂Se₃

Joseph L. Spellberg
, Lina Kodaimati
, Prakriti P. Joshi
, Nasim Mirzajani
, Liangbo Liang
, Sarah B. King

Nanomaterials Theory Institute

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β′-In₂Se₃ is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.

Original language	English
Article number	eado2136
Journal	Science Advances
Volume	10
Issue number	24
DOIs	https://doi.org/10.1126/sciadv.ado2136
State	Published - Jun 2024

Funding

this work was supported by the Office of Basic energy Sciences, U.S. department of energy (dOe) [grant de-Sc0021950 (S.B.K.)]; University of chicago Materials Research Science and engineering center, U.S. national Science Foundation [grant dMR-2011854 (shared facilities)]; University of chicago Materials Research Science and engineering center, U.S. national Science Foundation [grant dMR-1420709 (shared facilities)]; University of chicago Research computing center; center for nanophase Material Sciences, U.S. department of energy Office of Science User Facility (l.l.); University of chicago MRSec Kadanoff-Rice Fellowship [grants dMR-2011854 and dMR-1420709 (P.P.J.)]; and national energy Research Scientific computing center, dOe Office of Science User Facility, Office of Science of the U.S. department of energy [under contract no. de-Ac02-05ch11231 (l.l.)]. Acknowledgments: We thank c. Ophus from the lawrence Berkeley national laboratory for helpful discussions regarding data analysis and K. Waters from the University of chicago for assistance with manuscript preparation. Funding: this work was supported by the Office of Basic energy Sciences, U.S. department of energy (dOe) [grant de-Sc0021950 (S.B.K.)]; University of chicago Materials Research Science and engineering center, U.S. national Science Foundation [grant dMR-2011854 (shared facilities)]; University of chicago Materials Research Science and engineering center, U.S. national Science Foundation [grant dMR-1420709 (shared facilities)]; University of chicago Research computing center; center for nanophase Material Sciences, U.S. department of energy Office of Science User Facility (l.l.); University of chicago MRSec Kadanoff-Rice Fellowship [grants dMR-2011854 and dMR-1420709 (P.P.J.)]; and national energy Research Scientific computing center, dOe Office of Science User Facility, Office of Science of the U.S. department of energy [under contract no. de-Ac02-05ch11231 (l.l.)]. Author contributions: conceptualization: J.l.S., P.P.J., and S.B.K. Methodology: J.l.S., P.P.J., l.l., and S.B.K. Software: J.l.S., n.M., P.P.J., and l.l. investigation: J.l.S., l.K., and P.P.J. Resources: l.K., l.l., and S.B.K. visualization: J.l.S. and S.B.K. Writing— original draft: J.l.S. and S.B.K. Writing—review and editing: J.l.S., l.K., P.P.J., n.M., l.l., and S.B.K. Funding acquisition: S.B.K. Supervision: S.B.K. Competing interests: the authors declare that they have no competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials and can be found in Zenodo (http://doi.org/10.5281/zenodo.10994899).

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title = "Electronic structure orientation as a map of in-plane antiferroelectricity in β′-In2Se3",

abstract = "Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β′-In2Se3 is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.",

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AU - Spellberg, Joseph L.

AU - Kodaimati, Lina

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AU - Mirzajani, Nasim

AU - Liang, Liangbo

AU - King, Sarah B.

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N2 - Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β′-In2Se3 is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.

AB - Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β′-In2Se3 is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.

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Electronic structure orientation as a map of in-plane antiferroelectricity in β′-In₂Se₃

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