Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

Jie Ren; Guang Bian; Li Fu; Chang Liu; Tao Wang; Gangqiang Zha; Wanqi Jie; Madhab Neupane; T. Miller; M. Z. Hasan; T. C. Chiang

doi:10.1103/PhysRevB.90.205211

Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

Jie Ren, Guang Bian, Li Fu, Chang Liu, Tao Wang, Gangqiang Zha, Wanqi Jie, Madhab Neupane, T. Miller, M. Z. Hasan, T. C. Chiang

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound HgxCd1-xTe.

Original language	English
Article number	205211
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	90
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.90.205211
State	Published - Nov 17 2014
Externally published	Yes

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10.1103/PhysRevB.90.205211

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title = "Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues",

abstract = "Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound HgxCd1-xTe.",

author = "Jie Ren and Guang Bian and Li Fu and Chang Liu and Tao Wang and Gangqiang Zha and Wanqi Jie and Madhab Neupane and T. Miller and Hasan, \{M. Z.\} and Chiang, \{T. C.\}",

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year = "2014",

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doi = "10.1103/PhysRevB.90.205211",

language = "English",

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T1 - Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

AU - Ren, Jie

AU - Bian, Guang

AU - Fu, Li

AU - Liu, Chang

AU - Wang, Tao

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Neupane, Madhab

AU - Miller, T.

AU - Hasan, M. Z.

AU - Chiang, T. C.

PY - 2014/11/17

Y1 - 2014/11/17

N2 - Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound HgxCd1-xTe.

AB - Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound HgxCd1-xTe.

UR - https://www.scopus.com/pages/publications/84910594788

U2 - 10.1103/PhysRevB.90.205211

DO - 10.1103/PhysRevB.90.205211

M3 - Article

AN - SCOPUS:84910594788

SN - 1098-0121

VL - 90

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 20

M1 - 205211

ER -

Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

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