Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3

Jan Seidel; Morgan Trassin; Yi Zhang; Peter Maksymovych; Tino Uhlig; Peter Milde; Denny Köhler; Arthur P. Baddorf; Sergei V. Kalinin; Lukas M. Eng; Xiaoqing Pan; Ramamoorthy Ramesh

doi:10.1002/adma.201400557

Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO₃

Jan Seidel
, Morgan Trassin
, Yi Zhang
, Peter Maksymovych
, Tino Uhlig
, Peter Milde
, Denny Köhler
, Arthur P. Baddorf
, Sergei V. Kalinin
, Lukas M. Eng
, Xiaoqing Pan
, Ramamoorthy Ramesh

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.

Original language	English
Pages (from-to)	4376-4380
Number of pages	5
Journal	Advanced Materials
Volume	26
Issue number	25
DOIs	https://doi.org/10.1002/adma.201400557
State	Published - Jul 2014

Keywords

complex oxides
electronic properties
interfaces
nanotechnology
phase boundaries

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10.1002/adma.201400557

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@article{e6847a872ef542cba91aea332224824a,

title = "Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3",

abstract = "Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.",

keywords = "complex oxides, electronic properties, interfaces, nanotechnology, phase boundaries",

author = "Jan Seidel and Morgan Trassin and Yi Zhang and Peter Maksymovych and Tino Uhlig and Peter Milde and Denny K{\"o}hler and Baddorf, \{Arthur P.\} and Kalinin, \{Sergei V.\} and Eng, \{Lukas M.\} and Xiaoqing Pan and Ramamoorthy Ramesh",

year = "2014",

month = jul,

doi = "10.1002/adma.201400557",

language = "English",

volume = "26",

pages = "4376--4380",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "wiley",

number = "25",

}

TY - JOUR

T1 - Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO3

AU - Seidel, Jan

AU - Trassin, Morgan

AU - Zhang, Yi

AU - Maksymovych, Peter

AU - Uhlig, Tino

AU - Milde, Peter

AU - Köhler, Denny

AU - Baddorf, Arthur P.

AU - Kalinin, Sergei V.

AU - Eng, Lukas M.

AU - Pan, Xiaoqing

AU - Ramesh, Ramamoorthy

PY - 2014/7

Y1 - 2014/7

N2 - Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.

AB - Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.

KW - complex oxides

KW - electronic properties

KW - interfaces

KW - nanotechnology

KW - phase boundaries

UR - https://www.scopus.com/pages/publications/84903730803

U2 - 10.1002/adma.201400557

DO - 10.1002/adma.201400557

M3 - Article

AN - SCOPUS:84903730803

SN - 0935-9648

VL - 26

SP - 4376

EP - 4380

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Electronic properties of isosymmetric phase boundaries in highly strained Ca-doped BiFeO₃

Abstract

Keywords

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