TY - JOUR
T1 - Electronic Properties of Bilayer Graphene Strongly Coupled to Interlayer Stacking and an External Electric Field
AU - Park, Changwon
AU - Ryou, Junga
AU - Hong, Suklyun
AU - Sumpter, Bobby G.
AU - Kim, Gunn
AU - Yoon, Mina
N1 - Publisher Copyright:
© 2015 American Physical Society. © 2015 American Physical Society.
PY - 2015/7/2
Y1 - 2015/7/2
N2 - Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. We further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.
AB - Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. We further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.
UR - http://www.scopus.com/inward/record.url?scp=84937953254&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.115.015502
DO - 10.1103/PhysRevLett.115.015502
M3 - Article
AN - SCOPUS:84937953254
SN - 0031-9007
VL - 115
JO - Physical Review Letters
JF - Physical Review Letters
IS - 1
M1 - 015502
ER -