Electronic and transport properties of thermoelectric Ru2Si 3

David J. Singh; David Parker

doi:10.1142/S1793604713400134

Electronic and transport properties of thermoelectric Ru₂Si ₃

David J. Singh
, David Parker

Materials Theory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report calculations of the doping and temperature dependent thermopower of Ru₂Si₃ based on Boltzmann transport theory and the first principles electronic structure. We find that the performance reported to date can be significantly improved by optimization of the doping level and that ultimately n-type should have higher ZT than p-type.

Original language	English
Article number	1340013
Journal	Functional Materials Letters
Volume	6
Issue number	5
DOIs	https://doi.org/10.1142/S1793604713400134
State	Published - Oct 2013

Funding

Work at ORNL was supported by the Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Keywords

RuSi
Thermoelectric
silicide

Access to Document

10.1142/S1793604713400134

Cite this

@article{116bd3cb56034e9bacd3fe08f209c932,

title = "Electronic and transport properties of thermoelectric Ru2Si 3",

abstract = "We report calculations of the doping and temperature dependent thermopower of Ru2Si3 based on Boltzmann transport theory and the first principles electronic structure. We find that the performance reported to date can be significantly improved by optimization of the doping level and that ultimately n-type should have higher ZT than p-type.",

keywords = "RuSi, Thermoelectric, silicide",

author = "Singh, \{David J.\} and David Parker",

year = "2013",

month = oct,

doi = "10.1142/S1793604713400134",

language = "English",

volume = "6",

journal = "Functional Materials Letters",

issn = "1793-6047",

publisher = "World Scientific Publishing",

number = "5",

}

TY - JOUR

T1 - Electronic and transport properties of thermoelectric Ru2Si 3

AU - Singh, David J.

AU - Parker, David

PY - 2013/10

Y1 - 2013/10

N2 - We report calculations of the doping and temperature dependent thermopower of Ru2Si3 based on Boltzmann transport theory and the first principles electronic structure. We find that the performance reported to date can be significantly improved by optimization of the doping level and that ultimately n-type should have higher ZT than p-type.

AB - We report calculations of the doping and temperature dependent thermopower of Ru2Si3 based on Boltzmann transport theory and the first principles electronic structure. We find that the performance reported to date can be significantly improved by optimization of the doping level and that ultimately n-type should have higher ZT than p-type.

KW - RuSi

KW - Thermoelectric

KW - silicide

UR - https://www.scopus.com/pages/publications/84882310828

U2 - 10.1142/S1793604713400134

DO - 10.1142/S1793604713400134

M3 - Article

AN - SCOPUS:84882310828

SN - 1793-6047

VL - 6

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 5

M1 - 1340013

ER -