Abstract
The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 μB, 2 μB, 1 μB and 0.99 μB magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices.
Original language | English |
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Pages (from-to) | 142-148 |
Number of pages | 7 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 80 |
DOIs | |
State | Published - Jun 1 2016 |
Externally published | Yes |
Funding
The authors would like to thank for the continuous funding support of the National Science and Technology Major Project of the Ministry of Science and Technology of China ( 2012ZX0401031 ). Figs. 1 (a) and 2 were generated using the VESTA program [61] .
Funders | Funder number |
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Ministry of Science and Technology of China | 2012ZX0401031 |
Keywords
- Doping
- Electronic properties
- First-principles
- Graphene
- Semiconductor
- Spintronics