Abstract
Using state-of-the-art, aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for an intrinsic electronic reconstruction at the LAO/STO interface is shown. Simultaneous measurements of interfacial electron density and system polarization are crucial for establishing the highly debated origin of the 2D electron gas.
| Original language | English |
|---|---|
| Pages (from-to) | 3952-3957 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 29 |
| DOIs | |
| State | Published - Aug 2 2012 |
Keywords
- charge transport
- epitaxy
- oxide interfaces
- structure-property relationships
- thin films