Electron tomography of microelectronic device interconnects

Qing Yang, John Mardinly, Christian Kübel, Chris Nelson, Christian Kisielowski

Research output: Contribution to journalArticlepeer-review

Abstract

As the dimensions of microelectronic devices continue to decrease, single transmission electron microscopy images are not able to properly represent the 3D structures when the structure's curvature is comparable to the sample thickness. Electron tomography was used to study cylindrical vias coated with Ta-barrier layers and Cu-seed layers in 3D. Tomography reconstructions from both bright field images and high angle annular dark field images are presented. Fidelity of the reconstruction from single-axis and dual-axis tilt series is compared. Strategies for improving the fidelity of the reconstruction and making electron tomography practically applicable for device failure analysis of microelectronic industry are discussed.

Original languageEnglish
Pages (from-to)880-884
Number of pages5
JournalZeitschrift fuer Metallkunde/Materials Research and Advanced Techniques
Volume97
Issue number7
StatePublished - Jul 2006
Externally publishedYes

Keywords

  • Cu interconnect
  • Double-tilt
  • Electron tomography
  • Single-tilt

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