Electron paramagnetic resonance study of ion-implanted photorefractive crystals

A. Darwish, D. Ila, E. K. Willams, D. B. Poker, D. K. Hensley

Research output: Contribution to journalConference articlepeer-review

Abstract

The effect of the ion implantation (Fe) on LiNbO3, MgO, and Al2O3 crystals is studied using electron paramagnetic resonance (EPR). EPR measurements on these crystals were performed as a function of fluence at room temperature. The fluence was 1×1014 and 1×1016 ions/cm2. The unpaired carrier concentration increases with increasing fluence. The photosensitivity of these crystals was determined by observing in situ the effect of the laser illumination on the EPR signal and measuring the decay and the growth of the EPR signal. The EPR signal of Fe3+ was found to decrease in both MgO, and Al2O3; and was found to increase in LiNbO3. This indicated that in case of MgO, and Al2O3 Fe3+ will transfer into Fe2+/Fe4+, but in case of LiNbO3 Fe2+/Fe4+ will transfer into Fe3+; increasing the EPR signal. This was found primary due to some Fe2+ and Fe4+ ions, which is not intentionally doped on the LiNbO3 crystal but exist as a defect on the crystal.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume504
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 2 1997

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