Abstract
Scanning and transmission electron microscopy (SEM and TEM) have been used to examine the topographic and internal features of diamond films grown by the hot filament assisted chemical vapor deposition method. Films were grown under conditions chosen to provide three distinctly different diamond microstructures. One of these film structures is virtually free of stacking faults and twins within the grains. This paper relates internal and external growth features to each other, to Raman spectra and to the growth conditions. The growth features are discussed in terms of growth mechanisms.
Original language | English |
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Pages (from-to) | 199-210 |
Number of pages | 12 |
Journal | Surface and Coatings Technology |
Volume | 39-40 |
Issue number | C |
DOIs | |
State | Published - Dec 1 1989 |
Funding
Energy and Martin Marietta Energy Systems, Inc., (2) the U.S. Department of Energy, Division of Materials Sciences, Office of Basic Energy Sciences, (3) the U.S. Department of Energy, Assistant Secretary for Conservation and Renewable Energy, Office of Transportation Systems, as part of the High Temperature Materials Laboratory Program and (4) the Exploratory Studies Program of Oak Ridge National Laboratory. The research sponsored by the U.S. Department of Energy was under contract DE-3-ACO5-840R21400 with Martin Marietta Energy Systems, Inc. This research was jointly sponsored by (1) the U.S. Army Strategic Defense Command under MIPR W31RPD-8-P4030 with the U.S. Department of