Electron injection in semiconductor drift detectors

R. Bellwied, R. Beuttenmuller, W. Chen, D. DiMassimo, L. Dou, H. Dyke, A. French, J. R. Hall, G. W. Hoffmann, T. Humanic, I. V. Kotov, H. W. Kraner, Z. Li, D. Lynn, G. Ott, S. U. Pandey, C. Pruneau, V. L. Rykov, J. Schambach, J. SedlmeirE. Sugarbaker, J. Takahashi, W. K. Wilson

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report on the injection of electrons from surface structures of Silicon Drift Detectors into the bulk of the detector for calibration purposes. Also, with these injector structures, detection of magnetic field components perpendicular to the detector's surface is possible. Implanted line and dot injectors along with MOS injectors are discussed. Studies of lateral uniformity of injection, biasing of injectors to facilitate injection and dot injection are discussed.

Original languageEnglish
Pages (from-to)70-80
Number of pages11
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume416
Issue number1
DOIs
StatePublished - Oct 11 1998
Externally publishedYes

Funding

This work is supported in part by the US Department of Energy (under contract No. DE-AC02-76CH00016 and DE-FQ02-92ER40713), the National Science Foundation (under grant PHY-9511850), and the Robert A. Welch Foundation.

FundersFunder number
Robert A. Welch Foundation
US Department of EnergyDE-FQ02-92ER40713, DE-AC02-76CH00016
National Science FoundationPHY-9511850

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