TY - JOUR
T1 - Electron-impact ionization of Si6+ and Si7+ ions
AU - Zeijlmans Van Emmichoven, P. A.
AU - Bannister, M. E.
AU - Gregory, D. C.
AU - Havener, C. C.
AU - Phaneuf, R. A.
AU - Bell, E. W.
AU - Guo, X. Q.
AU - Thompson, J. S.
AU - Sataka, M.
PY - 1993
Y1 - 1993
N2 - Crossed beams of electrons and ions have been used to measure absolute cross sections for single ionization of Si6+ and Si7+ ions from below threshold to 1400 eV. The measurements for Si6+ and Si7+ agree with distorted-wave calculations for direct ionization within 20% and 5%, respectively, suggesting that this mechanism is the dominant contribution to the cross section. The bulk of the measurements were performed with the more abundant Si28 isotope; however, due to beam impurities, measurements with Si29 were used to correct the Si28 data.
AB - Crossed beams of electrons and ions have been used to measure absolute cross sections for single ionization of Si6+ and Si7+ ions from below threshold to 1400 eV. The measurements for Si6+ and Si7+ agree with distorted-wave calculations for direct ionization within 20% and 5%, respectively, suggesting that this mechanism is the dominant contribution to the cross section. The bulk of the measurements were performed with the more abundant Si28 isotope; however, due to beam impurities, measurements with Si29 were used to correct the Si28 data.
UR - https://www.scopus.com/pages/publications/5744248271
U2 - 10.1103/PhysRevA.47.2888
DO - 10.1103/PhysRevA.47.2888
M3 - Article
AN - SCOPUS:5744248271
SN - 1050-2947
VL - 47
SP - 2888
EP - 2892
JO - Physical Review A - Atomic, Molecular, and Optical Physics
JF - Physical Review A - Atomic, Molecular, and Optical Physics
IS - 4
ER -