Electron-impact ionization of Si6+ and Si7+ ions

P. A. Zeijlmans Van Emmichoven, M. E. Bannister, D. C. Gregory, C. C. Havener, R. A. Phaneuf, E. W. Bell, X. Q. Guo, J. S. Thompson, M. Sataka

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Crossed beams of electrons and ions have been used to measure absolute cross sections for single ionization of Si6+ and Si7+ ions from below threshold to 1400 eV. The measurements for Si6+ and Si7+ agree with distorted-wave calculations for direct ionization within 20% and 5%, respectively, suggesting that this mechanism is the dominant contribution to the cross section. The bulk of the measurements were performed with the more abundant Si28 isotope; however, due to beam impurities, measurements with Si29 were used to correct the Si28 data.

Original languageEnglish
Pages (from-to)2888-2892
Number of pages5
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume47
Issue number4
DOIs
StatePublished - 1993

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