Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe

B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, V. Dierolf

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We demonstrate the use of hydrogen-induced changes in the emission of isoelectric Eu ions, in Mg-doped p-type GaN, as a powerful probe to study the dynamics of hydrogen movement under electron-beam irradiation. We identify, experimentally, a two-step process in the dissociation of Mg-H complexes and propose, based on density functional theory, that the presence of minority carriers and the resulting charge states of hydrogen drive this process.

Original languageEnglish
Article number121202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number12
DOIs
StatePublished - Sep 30 2013

Fingerprint

Dive into the research topics of 'Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe'. Together they form a unique fingerprint.

Cite this