Electromagnetically Porous Infrared Plasmonic F,Sn-Doped In2O3 Semiconductor Nanocrystals for Infrared Optoelectronic Sensors

Shin Hum Cho; Do Yoon Park; Gi Yong Park; Kevin M. Roccapriore

doi:10.1021/acsanm.4c01711

Electromagnetically Porous Infrared Plasmonic F,Sn-Doped In₂O₃ Semiconductor Nanocrystals for Infrared Optoelectronic Sensors

Shin Hum Cho, Do Yoon Park, Gi Yong Park, Kevin M. Roccapriore

Data Nanoanalytics

Research output: Contribution to journal › Article › peer-review

Abstract

We report dopant-induced complex hierarchical shell growth in metal oxide nanocrystal cubes, leading to a high-density infrared near-field localized surface plasmonic resonance (LSPR) response per film area with an interparticle 41.25% film porosity. We synthesize electromagnetically porous infrared plasmonic nanocrystals via hierarchical cube-on-cube surface growth in highly aliovalently doped semiconductor nanocrystals. In indium oxide colloidal nanocrystal systems, under low Sn dopant, we observe uniform Frank-van der Merwe type shelling. While exceeding 4% Sn atomic dopant, excessive Sn on (400) nanocrystalline achieves a Volmer-Weber island formation-type growth. Through surface XPS analysis, we exclude Stranski-Krastanov-type growth, an intermediary between uniform and island surface growth. Through complex hierarchical shapes in infrared plasmonic semiconductor nanocrystal surfaces, infrared range optical extinction is observed around the 2500 nm wavelength. Direct electromagnetic near-field was imaged through the infrared STEM-EELS electron microscopy technique in single nanocrystals. Due to the intrinsic interparticle gap under monolayer film architecture, electromagnetically dense near-field plasmonic response was directly observed via STEM-EELS.

Original language	English
Pages (from-to)	15046-15056
Number of pages	11
Journal	ACS Applied Nano Materials
Volume	7
Issue number	13
DOIs	https://doi.org/10.1021/acsanm.4c01711
State	Published - Jul 12 2024

Funding

This work was supported by the Bisa Research Grant of Keimyung University in 2023 (20220648). We thank the Korea Basic Science Institute (KBSI) Daegu Center user facility for TEM (Jong Hwa Kim) and XRD (Dong Yeop Kwak) and the KBSI Busan Center (Jong-Seong Bae) for XPS and K-ALPHA+ system equipment support. Monochromated STEM-EELS research was supported by the Center for Nanophase Materials Sciences (CNMS), which is a DOE Office of Science User Facility using instrumentation within ORNL\u2019s Materials Characterization Core provided by UT-Battelle, LLC, under Contract No. DE-AC05-00OR22725 with the DOE. We thank Keimyung University (KMU) Undergraduate Researchers, Soo Jin Choi, Kang Bin Park, Ju Ye Kim, Tae Yeon Kim, Dong Hyeon Seong, Yeon Hee Park, Jeong Bin Lee, and Se Woong Hwang, for the research discussion and support.

Funders	Funder number
U.S. Department of Energy
Center for Nanophase Materials Sciences
Keimyung University	20220648
Office of Science	DE-AC05-00OR22725

Keywords

infrared optoelectronic sensors
localized surface plasmonic resonance
semiconductor nanocrystals

Access to Document

10.1021/acsanm.4c01711

Cite this

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title = "Electromagnetically Porous Infrared Plasmonic F,Sn-Doped In2O3 Semiconductor Nanocrystals for Infrared Optoelectronic Sensors",

abstract = "We report dopant-induced complex hierarchical shell growth in metal oxide nanocrystal cubes, leading to a high-density infrared near-field localized surface plasmonic resonance (LSPR) response per film area with an interparticle 41.25% film porosity. We synthesize electromagnetically porous infrared plasmonic nanocrystals via hierarchical cube-on-cube surface growth in highly aliovalently doped semiconductor nanocrystals. In indium oxide colloidal nanocrystal systems, under low Sn dopant, we observe uniform Frank-van der Merwe type shelling. While exceeding 4% Sn atomic dopant, excessive Sn on (400) nanocrystalline achieves a Volmer-Weber island formation-type growth. Through surface XPS analysis, we exclude Stranski-Krastanov-type growth, an intermediary between uniform and island surface growth. Through complex hierarchical shapes in infrared plasmonic semiconductor nanocrystal surfaces, infrared range optical extinction is observed around the 2500 nm wavelength. Direct electromagnetic near-field was imaged through the infrared STEM-EELS electron microscopy technique in single nanocrystals. Due to the intrinsic interparticle gap under monolayer film architecture, electromagnetically dense near-field plasmonic response was directly observed via STEM-EELS.",

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author = "Cho, {Shin Hum} and Park, {Do Yoon} and Park, {Gi Yong} and Roccapriore, {Kevin M.}",

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N2 - We report dopant-induced complex hierarchical shell growth in metal oxide nanocrystal cubes, leading to a high-density infrared near-field localized surface plasmonic resonance (LSPR) response per film area with an interparticle 41.25% film porosity. We synthesize electromagnetically porous infrared plasmonic nanocrystals via hierarchical cube-on-cube surface growth in highly aliovalently doped semiconductor nanocrystals. In indium oxide colloidal nanocrystal systems, under low Sn dopant, we observe uniform Frank-van der Merwe type shelling. While exceeding 4% Sn atomic dopant, excessive Sn on (400) nanocrystalline achieves a Volmer-Weber island formation-type growth. Through surface XPS analysis, we exclude Stranski-Krastanov-type growth, an intermediary between uniform and island surface growth. Through complex hierarchical shapes in infrared plasmonic semiconductor nanocrystal surfaces, infrared range optical extinction is observed around the 2500 nm wavelength. Direct electromagnetic near-field was imaged through the infrared STEM-EELS electron microscopy technique in single nanocrystals. Due to the intrinsic interparticle gap under monolayer film architecture, electromagnetically dense near-field plasmonic response was directly observed via STEM-EELS.

AB - We report dopant-induced complex hierarchical shell growth in metal oxide nanocrystal cubes, leading to a high-density infrared near-field localized surface plasmonic resonance (LSPR) response per film area with an interparticle 41.25% film porosity. We synthesize electromagnetically porous infrared plasmonic nanocrystals via hierarchical cube-on-cube surface growth in highly aliovalently doped semiconductor nanocrystals. In indium oxide colloidal nanocrystal systems, under low Sn dopant, we observe uniform Frank-van der Merwe type shelling. While exceeding 4% Sn atomic dopant, excessive Sn on (400) nanocrystalline achieves a Volmer-Weber island formation-type growth. Through surface XPS analysis, we exclude Stranski-Krastanov-type growth, an intermediary between uniform and island surface growth. Through complex hierarchical shapes in infrared plasmonic semiconductor nanocrystal surfaces, infrared range optical extinction is observed around the 2500 nm wavelength. Direct electromagnetic near-field was imaged through the infrared STEM-EELS electron microscopy technique in single nanocrystals. Due to the intrinsic interparticle gap under monolayer film architecture, electromagnetically dense near-field plasmonic response was directly observed via STEM-EELS.

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