Abstract
Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on.
PACS: 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.
| Original language | English |
|---|---|
| Article number | 630 |
| Journal | Nanoscale Research Letters |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2014 |
| Externally published | Yes |
Funding
This work was financially supported by “the Fundamental Research Funds for the Central Universities” (Grant No. 2652013067, 2652012070, and 2652012054) and “the National Natural Science Foundation of China” (Grand No. 61106065 and 11404293).
| Funders | Funder number |
|---|---|
| National Natural Science Foundation of China | 11404293, 61106065 |
| Fundamental Research Funds for the Central Universities | 2652012054, 2652013067, 2652012070 |
Keywords
- Graphene
- Light-emitting diodes
- Nanorod array
- Zinc oxide