Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

A. P. Li; Lidong Zhang; Y. X. Zhang; G. G. Qin; Xin Wang; X. W. Hu

doi:10.1063/1.118115

Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

A. P. Li
, Lidong Zhang
, Y. X. Zhang
, G. G. Qin
, Xin Wang
, X. W. Hu

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 Å) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Å from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied.

Original language	English
Pages (from-to)	4-6
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	1
DOIs	https://doi.org/10.1063/1.118115
State	Published - Jul 1 1996
Externally published	Yes

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title = "Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method",

abstract = "We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 {\AA}) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 {\AA} from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied.",

author = "Li, \{A. P.\} and Lidong Zhang and Zhang, \{Y. X.\} and Qin, \{G. G.\} and Xin Wang and Hu, \{X. W.\}",

year = "1996",

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doi = "10.1063/1.118115",

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journal = "Applied Physics Letters",

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T1 - Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

AU - Li, A. P.

AU - Zhang, Lidong

AU - Zhang, Y. X.

AU - Qin, G. G.

AU - Wang, Xin

AU - Hu, X. W.

PY - 1996/7/1

Y1 - 1996/7/1

N2 - We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 Å) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Å from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied.

AB - We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 Å) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Å from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied.

UR - https://www.scopus.com/pages/publications/0030197172

U2 - 10.1063/1.118115

DO - 10.1063/1.118115

M3 - Article

AN - SCOPUS:0030197172

SN - 0003-6951

VL - 69

SP - 4

EP - 6

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method

Abstract

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