TY - JOUR
T1 - Electro-Thermal Control on Power Electronic Converters
T2 - SAE 2021 WCX Digital Summit
AU - Ozkan, Gokhan
AU - Hoang, Phuong
AU - Badr, Payam
AU - Edrington, Christopher
N1 - Publisher Copyright:
© 2021 SAE International. All rights reserved.
PY - 2021/4/6
Y1 - 2021/4/6
N2 - With the increasing attention towards electric vehicles (EV), power electronics technology has become more prominent on vehicular systems. EV requires compact energy conversion and control technology to improve system efficiency and optimize the sizing of power components. Therefore, it is important to reduce thermal losses, while supplying an adequate amount of power to different EV devices. Silicon carbide (SiC)-based power semiconductors provide performance improvements such as lower power losses, higher junction temperature and higher switching frequency compared to the conventional silicon (Si)-based switching devices. High-frequency switching is preferred for power converters to minimize the necessity of passive filters; however, high-frequency switching causes additional thermal stress on semiconductor switches due to the increase in switching losses. The degradation of switching devices in power converters are primarily related to the junction temperature. One method to improve the lifetime of semiconductors is to control the module junction temperature by controlling switching losses in the switching state, while providing power quality in the required limits and maintaining voltage stability. This concept is referred to as active thermal management. This paper illustrates the Finite Control Set Model Predictive Control (FCS-MPC) approach on how electrical performance can be preserved while providing electro-thermal management for the SiC-based switching devices on three-level three-phase power converter to improve system efficiency and reliability.
AB - With the increasing attention towards electric vehicles (EV), power electronics technology has become more prominent on vehicular systems. EV requires compact energy conversion and control technology to improve system efficiency and optimize the sizing of power components. Therefore, it is important to reduce thermal losses, while supplying an adequate amount of power to different EV devices. Silicon carbide (SiC)-based power semiconductors provide performance improvements such as lower power losses, higher junction temperature and higher switching frequency compared to the conventional silicon (Si)-based switching devices. High-frequency switching is preferred for power converters to minimize the necessity of passive filters; however, high-frequency switching causes additional thermal stress on semiconductor switches due to the increase in switching losses. The degradation of switching devices in power converters are primarily related to the junction temperature. One method to improve the lifetime of semiconductors is to control the module junction temperature by controlling switching losses in the switching state, while providing power quality in the required limits and maintaining voltage stability. This concept is referred to as active thermal management. This paper illustrates the Finite Control Set Model Predictive Control (FCS-MPC) approach on how electrical performance can be preserved while providing electro-thermal management for the SiC-based switching devices on three-level three-phase power converter to improve system efficiency and reliability.
UR - https://www.scopus.com/pages/publications/85104841472
U2 - 10.4271/2021-01-0200
DO - 10.4271/2021-01-0200
M3 - Conference article
AN - SCOPUS:85104841472
SN - 0148-7191
JO - SAE Technical Papers
JF - SAE Technical Papers
IS - 2021
Y2 - 13 April 2021 through 15 April 2021
ER -