Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Dongwon Shin; Hyeonbeom Kim; Sung Ju Hong; Sehwan Song; Yeongju Choi; Youngkuk Kim; Sungkyun Park; Dongseok Suh; Woo Seok Choi

doi:10.1002/adfm.202311287

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Dongwon Shin, Hyeonbeom Kim, Sung Ju Hong, Sehwan Song, Yeongju Choi, Youngkuk Kim, Sungkyun Park, Dongseok Suh, Woo Seok Choi

Research output: Contribution to journal › Article › peer-review

Abstract

Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin-symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate-tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO₃ epitaxial thin film exhibits an electrically tunable spin-exchange splitting. The large and adjustable spin-exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin-symmetry-broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization-induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.

Original language	English
Article number	2311287
Journal	Advanced Functional Materials
Volume	34
Issue number	11
DOIs	https://doi.org/10.1002/adfm.202311287
State	Published - Mar 11 2024
Externally published	Yes

Funding

D.S., H.K. and S.J.H. contributed equally to this work. The authors thank S. Hong at Sejong University and J. Kim at Incheon National University, Republic of Korea for helpful discussion. This work was supported by the the National Research Foundation of Korea (NRF‐2021R1A2C2011340, NRF‐RS‐2023‐00220471, NRF‐RS‐2023‐00281671, NRF‐2022R1F1A1064085, NRF‐2022M3I7A3051578, NRF‐2021R1A6A1A10039823, NRF‐2021R1A2C1013871, and NRF‐2021M3H3A1038085) and Ewha Womans University (Ewha Frontier 10‐10 Research Grant).

Funders	Funder number
Ewha Womans University
National Research Foundation of Korea	NRF‐2021M3H3A1038085, NRF‐2021R1A2C1013871, NRF‐RS‐2023‐00220471, NRF‐RS‐2023‐00281671, NRF‐2022M3I7A3051578, NRF‐2021R1A2C2011340, NRF‐2021R1A6A1A10039823

Keywords

electric gate control
graphene
interfacial charge transfer
perovskite LaCoO
quantum Hall effect
spin exchange splitting

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10.1002/adfm.202311287

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title = "Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure",

abstract = "Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin-symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate-tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin-exchange splitting. The large and adjustable spin-exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin-symmetry-broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization-induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.",

keywords = "electric gate control, graphene, interfacial charge transfer, perovskite LaCoO, quantum Hall effect, spin exchange splitting",

author = "Dongwon Shin and Hyeonbeom Kim and Hong, {Sung Ju} and Sehwan Song and Yeongju Choi and Youngkuk Kim and Sungkyun Park and Dongseok Suh and Choi, {Woo Seok}",

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AU - Shin, Dongwon

AU - Kim, Hyeonbeom

AU - Hong, Sung Ju

AU - Song, Sehwan

AU - Choi, Yeongju

AU - Kim, Youngkuk

AU - Park, Sungkyun

AU - Suh, Dongseok

AU - Choi, Woo Seok

PY - 2024/3/11

Y1 - 2024/3/11

N2 - Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin-symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate-tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin-exchange splitting. The large and adjustable spin-exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin-symmetry-broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization-induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.

AB - Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin-symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate-tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin-exchange splitting. The large and adjustable spin-exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin-symmetry-broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization-induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.

KW - electric gate control

KW - graphene

KW - interfacial charge transfer

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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

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